Structure-resistive property relationships in thin ferroelectric BaTiO$$_{3}$$ films

Investigation of resistive switching in anodized titanium dioxide thin films

In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...

Scaling Of Ferroelectric Properties In Thin Films

A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...

Ferroelastic domains in bilayered ferroelectric thin films

We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of 001 tetragonal PbZrxTi1−xO3 and 001 rhombohedral PbZr1−xTixO3 on a thick 001 passive substrate as a function of the lattice misfit strain between layers and the substrate. By considering the self-strain in each layer and the indirect elastic interaction between the layers, we provide a numerica...

Charge Transport in Ferroelectric Thin Films